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| EFA720AV-CP083 UPDATED 01/30/2006 Low Distortion GaAs Power FET 720AV EFA FEATURES * * * * * * NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5dBm OUTPUT POWER 17.0 dB TYPICAL POWER GAIN AT 2 GHz 0.5x4800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFLIE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY All Dimensions in mil Tolerance: 3 mil Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB PAE IDSS GM VP BVGD BVGS RTH* PARAMETER/TEST CONDITIONS Output Power at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Gain at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Power Added Efficiency at 1dB Compression Vds = 8 V, Ids=50% Idss f= Saturated Drain Current Transconductance Pinch-off Voltage Drain Breakdown Voltage Source Breakdown Voltage Thermal Resistance 2.0 GHz 4.0 GHz 2.0 GHz 4.0 GHz 2.0 GHz 1200 840 MIN 33.5 15.5 TYP 35.5 35.5 17.0 12.0 36 2040 1100 -2.0 -13 -7 -15 -14 6* o MAX UNITS dBm dB % VDS = 3 V, VGS = 0 V VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 10 mA IGD = 7.2 mA IGS = 7.2 mA 2640 mA mS -3.5 V V V C/W Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -5V 32.4 mA 5.4 mA 32.5 dBm 175oC -65/175oC 20 W CONTINUOUS2 8V -3V 10.8 mA 1.8 mA @ 3dB Compression 175oC -65/175oC 20 W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised January 2006 |
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